发明名称 Power semiconductor module
摘要 In a semiconductor module according to certain aspects the invention, a U-terminal and an M-terminal overlap each other in a manner to reduce inductance and to further to reduce the size of snubber capacitor. In certain aspects of the invention, a P-terminal, M-terminal, N-terminal, and U-terminal are arranged such that the U-terminal, through which currents flow in and out, is arranged farthest away from control electrodes to reduce the noises superposed to control electrodes, and the P-terminal, M-terminal, N-terminal, and U-terminal are aligned to facilitate attaching external connection bars thereto. A power semiconductor module according to aspects of the invention can facilitate reducing the wiring inductance inside and outside the module, reducing the electromagnetic noises introduced into the control terminals, and attaching the external wirings to the terminals thereof simply and easily.
申请公布号 US8766331(B2) 申请公布日期 2014.07.01
申请号 US201113295454 申请日期 2011.11.14
申请人 Fuji Electric Co., Ltd. 发明人 Okita Souichi
分类号 H01L29/66;H01L29/739 主分类号 H01L29/66
代理机构 Rossi, Kimms & McDowell, LLP 代理人 Rossi, Kimms & McDowell, LLP
主权项 1. A power semiconductor module for use with a first power supply, a second power supply and a load, the power semiconductor module comprising: a case; a first circuit comprising a first IGBT and a first diode connected in opposite parallel to each other, the first circuit constituting an upper arm; a second circuit comprising a second IGBT and a second diode connected in opposite parallel to each other, the second circuit constituting a lower arm; an intermediate circuit comprising a first reverse blocking IGBT and a second reverse blocking IGBT connected in opposite parallel to each other; a control terminal, the control terminal being connected to gates of the first IGBT, the second IGBT, the first reverse blocking IGBT and the second reverse blocking IGBT; an output terminal connecting a third connection point, a collector of the first reverse blocking IGBT and an emitter of the second reverse blocking IGBT to each other; an intermediate terminal connecting a first connection point, an emitter of the first reverse blocking IGBT and a collector of the second reverse blocking IGBT to each other, the intermediate terminal configured to connect the first power supply and the second power supply in series to each other at the first connection point; a first end of the first circuit configured to be connected to a high-potential-side of the first power supply at a second connection point; a second end of the first circuit, the second circuit, and the intermediate circuit configured to be connected to the load at the third connection point; the second circuit configured to be connected to a low-potential-side of the second power supply at a fourth connection point; and the output terminal and the intermediate terminal overlapping each other in the case.
地址 JP