Method of manufacturing semiconductor device

摘要

A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the epitaxial growth layer, forming a protective film made of silicon nitride on the substrate with the epitaxial growth layer into which the ion implantation was performed, and heating the substrate with the epitaxial growth layer on which the protective film was formed to a temperature range of 1600° C. or more in an atmosphere containing gas including a nitrogen atom.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
preparing a substrate made of silicon carbide; performing ion implantation into said substrate; forming a protective film made of silicon nitride on said substrate into which said ion implantation was performed; and heating said substrate on which said protective film was formed to a temperature range of 1600° C. or more in an atmosphere containing gas including a nitrogen atom to generate silicon nitride by extracting silicon from said substrate through a crack of said protective film and bonding said silicon and nitrogen in said gas, and wherein said protective film is repaired by said silicon nitride generated through said heating.