| 发明名称 | Double patterning process | ||
| 摘要 | A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings. | ||
| 申请公布号 | US8765612(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201213615669 | 申请日期 | 2012.09.14 |
| 申请人 | Nanya Technology Corporation | 发明人 | Lee Jenn-Wei;Liu Hung-Jen |
| 分类号 | H01L21/302 | 主分类号 | H01L21/302 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A double patterning process, comprising: providing a substrate having a first area and a second area; forming a target layer over the substrate; forming a patterned first photoresist layer over the target layer, wherein the patterned first photoresist layer has a plurality of first openings and has a first thickness in the first area, at least a first portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness, and the second thickness is greater than zero; and forming a second photoresist layer covering the patterned first photoresist layer and filling in the first openings. | ||
| 地址 | Taoyuan TW | ||