Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters

摘要

Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a layer of semiconductor material having an average lattice parameter at room temperature proximate an average lattice parameter of the layer of semiconductor material previously attained at an elevated temperature.

主权项

1. A method of fabricating a semiconductor structure or device, comprising:
changing a temperature of a layer of semiconductor material attached to a base substrate from a first temperature to a second temperature, wherein the base substrate has a selected coefficient of thermal expansion that is different from a coefficient of thermal expansion of the layer of semiconductor material; causing a lattice parameter of the layer of semiconductor material to change from a first value to a second value while changing the temperature of the layer of semiconductor material from the first temperature to the second temperature; bonding the layer of semiconductor material to another layer of material while the layer of semiconductor material is at the second temperature; removing the bonded layer of semiconductor material and the another layer of material from the base substrate; returning the temperature of the layer of semiconductor material to the first temperature after bonding the layer of semiconductor material to the another layer of material and removing the bonded layer of semiconductor material and the another layer of material from the base substrate; and growing at least one additional layer of semiconductor material on the layer of semiconductor material; wherein the another layer of material has a selected coefficient of thermal expansion lower than a coefficient of thermal expansion of the base substrate, such that the another layer of material prevents the lattice parameter of the layer of semiconductor material from returning to the first value upon returning the temperature of the layer of semiconductor material to the first temperature.