ASYMMETRIC TWO-TERMINAL BIRISTOR AND FABRICATION METHOD

摘要

An embodiment of the present invention relates to an asymmetric two-terminal biristor and a fabrication method thereof. An asymmetric two-terminal biristor according to an embodiment includes a substrate; a first semiconductor layer which is formed on the substrate; a second substrate layer which is formed on the first semiconductor layer; a third semiconductor layer which is formed on the second semiconductor layer; a first conduction layer which is electrically connected to the first semiconductor layer; and a second conduction layer which is electrically connected to the third semiconductor layer. The second semiconductor layer has a first impurity region and a second impurity region. The concentration of the first impurity region is greater than that of the second impurity region.