| 发明名称 | Field programming method for magnetic memory devices | ||
| 摘要 | In one embodiment of the invention, there is provided a method for operating a magnetic memory device. The method comprises selecting a subset of magnetic memory cells of the magnetic memory device; applying a first programming voltage to the selected subset of cells for a predetermined amount of time, wherein the programming voltage is selected to exceed a threshold operating voltage thereby to cause irreversible breakdown of the subset of cells; and reading selected cells of the magnetic memory device by passing a read current through a diode connected in series with each magnetic memory cell. | ||
| 申请公布号 | US8767435(B1) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201113311453 | 申请日期 | 2011.12.05 |
| 申请人 | III Holdings 1, LLC | 发明人 | Mani Krishnakumar |
| 分类号 | G11C17/02 | 主分类号 | G11C17/02 |
| 代理机构 | McAndrews, Held & Malloy, Ltd. | 代理人 | McAndrews, Held & Malloy, Ltd. |
| 主权项 | 1. A method for operating a magnetic memory device, the method comprising: selecting a subset of magnetic memory cells of the magnetic memory device; applying a first programming voltage to the selected subset of cells for a predetermined amount of time, wherein the programming voltage is selected to exceed a threshold voltage thereby to cause irreversible breakdown of the subset of cells; and reading selected cells of the magnetic memory device by passing a read current through a diode connected in series with each magnetic memory cell; wherein in the case of a programming error, applying the first programming voltage for the predetermined amount of time to the cells that were not selected; and applying a second programming voltage to the selected subset of cells for a predetermined amount of time; wherein the second programming voltage is greater than the first programming voltage. | ||
| 地址 | Wilmington DE US | ||