Method of verifying programming of a nonvolatile memory device

摘要

A first verify voltage is applied to a word line of a selected memory cell, after a bit line is precharged, to program-verify the memory cell in a nonvolatile memory device. A first read evaluation operation for changing a voltage of the bit line is performed. Results of the first read evaluation operation are sensed using a first sensing voltage. A second read evaluation operation for changing the voltage of the bit line is performed again. Results of the second read verify operation are then sensed using the first sensing voltage.

主权项

1. A method of verifying programming of a selected memory cell of a nonvolatile memory device, the method comprising:
precharging a bit line; a first sensing step of applying a first verify voltage to a word line of the selected memory cell, performing a first read evaluation operation for changing a voltage of the bit line, and sensing results of the first read evaluation operation using a first sensing voltage; and a second sensing step of, after the first sensing step, performing a second read evaluation operation for changing thea voltage of the bit line, and sensing results of the second read evaluation operation using the firsta second sensing voltage.