发明名称 |
Protective structure |
摘要 |
A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone. |
申请公布号 |
US8766415(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201314011885 |
申请日期 |
2013.08.28 |
申请人 |
Infineon Technologies AG |
发明人 |
Schmenn Andre;Sojka Damian;Ahrens Carsten |
分类号 |
H01L31/075;H01L31/105;H01L31/117 |
主分类号 |
H01L31/075 |
代理机构 |
|
代理人 |
|
主权项 |
1. A protective structure comprising:
a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; a common connection device in direct contact with the first dopant zone and the second dopant. |
地址 |
Neubiberg DE |