发明名称 |
Post deposition treatments for CVD cobalt films |
摘要 |
Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process. |
申请公布号 |
US8765601(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201313956969 |
申请日期 |
2013.08.01 |
申请人 |
Applied Materials, Inc. |
发明人 |
Lei Yu;Fu Xinyu;Subramani Anantha;Ganguli Seshadri;Gandikota Srinivas |
分类号 |
H01L21/283;B82Y40/00 |
主分类号 |
H01L21/283 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method for depositing materials on a substrate surface, comprising:
forming a cobalt stack over a barrier layer disposed on a substrate by:
depositing a cobalt layer during a deposition process;exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process; andrepeating the deposition process and the plasma process to form the cobalt stack, the cobalt stack comprising a plurality of plasma-treated cobalt layers; and heating the cobalt stack to a crystallization temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film from the cobalt stack during a thermal annealing crystallization process. |
地址 |
Santa Clara CA US |