Thick on-chip high-performance wiring structures

摘要

Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere. After the first wire is annealed, a second wire is formed in vertical alignment with the first wire. A final passivation layer, which is comprised of an organic material such as polyimide, is formed that covers an entirety of a sidewall of the second wire.

主权项

1. A method of fabricating a back-end-of-line wiring structure, the method comprising:
forming a first wire and a second wire in a first dielectric layer; annealing the first wire and the second wire in an oxygen-free atmosphere; after annealing the first wire and the second wire, forming a third wire that is stacked with the first wire and a fourth wire that is stacked with the second wire; and forming a final passivation layer comprised of an organic material that covers an entirety of a sidewall of the third wire and of a sidewall of the fourth wire, wherein the first wire and the second wire each have a thickness ranging from 6 microns to 10 microns, the third wire and the fourth wire each have a thickness ranging from 4 microns to 6 microns, and the second wire is adjacent to the first wire and laterally separated from the first wire by a distance less than or equal to 15 microns.