Semiconductor device having metal gate and manufacturing method thereof

摘要

A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

主权项

1. A method of manufacturing a semiconductor device having metal gate, comprising:
providing a substrate having at least a dummy gate formed thereon; forming a sacrificial layer covering sidewalls of the dummy gate; forming a dielectric layer exposing a top of the dummy gate after forming the sacrificial layer; performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess; and performing a second etching process to remove the dummy gate to form a second recess, the first recess and the second recess constructing a T-shaped gate trench.