Self-aligned cross-point phase change memory-switch array

摘要

Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.

主权项

1. A method of forming a cross-point memory array, comprising:
forming a set of substantially parallel rows of a first multiple-layer memory structure separated by first trenches, the first multi-layer memory structure comprising a first phase change material layer between a first memory electrode layer and a second memory electrode layer; filling said first trenches with a first passivation material to form a first resulting structure; and forming a set of substantially parallel columns of a second multiple-layer switch structure perpendicular to said parallel rows over said first resulting structure, the second multi-layer switch structure having a switch layer comprising a second phase change material layer, wherein forming the set of substantially parallel columns of the second multi-layer switch structure comprises etching the first phase change material layer, the first memory electrode layer and the second memory electrode layer.