Non-volatile storage having a connected source and well

摘要

A non-volatile storage device is disclosed that includes a set of connected non-volatile storage elements formed on a well, a bit line contact positioned in the well, a source line contact positioned in the well, a bit line that is connected to the bit line contact, and a source line that is connected to the source line contact and the well.

主权项

1. A method for fabricating non-volatile storage, comprising:
forming a first dielectric layer on a well; forming a first gate layer on said first dielectric layer; forming a second dielectric layer on said first gate layer; forming a second gate layer on said second dielectric layer; creating source/drain regions, bit line contacts and source line contacts in said well; creating bit lines that connect to said bit line contacts and that do not connect to said well; and creating a source line that connects to said source line contacts and connects to said well.