Method for manufacturing semiconductor device including Schottky electrode

摘要

A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type region in a region including the main surface, forming an oxide film on the main surface across the n type region and the p type region, by heating the substrate having the p type region formed therein at a temperature of 1250° C. or more, removing the oxide film to expose at least a part of the main surface, and forming a Schottky electrode in contact with the main surface that has been exposed by removing the oxide film.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
preparing a substrate made of silicon carbide and having a first conductivity type region formed to include one main surface; forming a second conductivity type region in a region including said main surface; forming an oxide film on said main surface across said first conductivity type region and said second conductivity type region, by heating said substrate having said second conductivity type region formed therein at a temperature of 1250° C. or more; removing said oxide film to expose at least a part of said main surface; and forming a Schottky electrode in contact with said main surface that has been exposed by removing said oxide film.