Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis

摘要

Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

主权项

1. A method for preparing a substrate for analysis, comprising removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam, wherein the defect is not substantially altered by said removing, and wherein the portion of the material that is removed proximate to the defect laterally surrounds the defect.