Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof

摘要

The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent magnetic tunnel junctions when data is written and read. This semiconductor MRAM device comprises a magnetic tunnel junction unit and a magnetic shielding material layer covering the sidewalls of the magnetic tunnel junction unit. The method for manufacturing a semiconductor device comprises: forming a magnetic tunnel junction unit, depositing an isolation dielectric layer to cover the top and the sidewall of the magnetic tunnel junction unit, and depositing a magnetic shielding material layer on the isolation dielectric layer.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a magnetic tunnel junction unit having a top and sidewalls; depositing an isolation dielectric layer to cover the top and the sidewalls of the magnetic tunnel junction unit; depositing a magnetic shielding material layer on the isolation dielectric layer, wherein the magnetic shielding material layer has a first portion that is located above the magnetic tunnel junction unit and a second portion that covers the sidewalls of the magnetic tunnel junction unit and the isolation dielectric layer; etching the first portion of the magnetic shielding material layer by removing a central part of the first portion while leaving a peripheral part of the first portion; and processing the peripheral part of the first portion of the magnetic shielding material layer to make it non-conductive.