| 摘要 |
In order to realize a method for manufacturing a semiconductor compound which can replace titanium dioxide and has superior physical properties rapidly and safely obtained in operational processes, and a material manufactured thereby, the present invention provides the method for manufacturing the semiconductor compound. The method includes a step of providing a mixed solution of titanium dioxide, a cadmium precursor, 3-mercaptopropionic acid, and water and a step of forming a semiconductor compound combined with titanium dioxide and cadmium sulfide by irradiating the mixed solution with microwaves. [Reference numerals] (S100) Step of providing a titanium dioxide aqueous solution; (S200) Step of forming a cadmium dithiol complex; (S300) Step of manufacturing a mixed solution between the cadmium dithiol complex and the titanium dioxide aqueous solution; (S400) Step of irradiating the mixed solution with microwaves; (S500) Step of obtaining and drying determined nanocrystal in which cadmium sulfide and titanium dioxide are combined |
