THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

In a thin film transistor display panel and a method of fabricating the same according to an embodiment of the present invention, a gate electrode of the thin film transistor, which includes a channel layer consisting of an oxide semiconductor, is not overlapped with a source electrode or a drain electrode, therefore parasitic capacitance can be reduced. A channel of the thin film transistor has the same width as that of a pixel electrode which is in parallel to a gate line. The length of the channel of the thin film transistor is the same as a width of the gate electrode overlapped with the channel layer, so that the width of the channel of the thin film transistor can be widely formed. In addition, the length of the channel of the thin film transistor is reduced, so that the characteristic of the thin film transistor can be improved. The pixel electrode is positioned on the same layer as that of the channel layer and formed on the same layer as that of the drain electrode. Accordingly, a contact hole used to connect the drain electrode with the pixel electrode is not required, thereby preventing an aperture of the thin film transistor display panel from being degraded.