| 摘要 |
<p>A method for forming a contact hole according to an embodiment of the present invention includes the steps of: forming a first metallic layer on an insulating material layer; sequentially forming at least one interlayer dielectric layer on the insulating material layer to cover the first metallic layer; forming the contact hole passing through the at least one interlayer dielectric layer so that a portion of the first metallic layer can be exposed through a dry etching process for the at least one interlayer dielectric layer; removing a damaged layer formed as a partial surface of the first metallic layer is exposed through the drying etching; and forming a second metallic layer connected with the first metallic layer through the contact hole on the interlayer dielectric layer.</p> |
