发明名称 Canary based SRAM adaptive voltage scaling (AVS) architecture and canary cells for the same
摘要 A memory bank includes memory cells and an additional cell to determine an operating voltage of the memory bank. The additional cell has an operating margin that is less than a corresponding operating margin of the other memory cells in the memory bank.
申请公布号 US8767428(B2) 申请公布日期 2014.07.01
申请号 US201113172665 申请日期 2011.06.29
申请人 STMicroelectronics International N. V. 发明人 Asthana Vivek
分类号 G11C15/00 主分类号 G11C15/00
代理机构 Hogan Lovells US LLP 代理人 Hogan Lovells US LLP
主权项 1. A memory bank comprising: memory cells; and at least one additional cell configured to determine an operating voltage of the memory bank, the at least one additional cell being configured such that at least one operating margin of the at least one additional cell is less than a corresponding operating margin of the memory cells, wherein an operating voltage of the memory bank is determined based on failure of the at least one additional cell.
地址 Amsterdam NL