Semiconductor light-emitting device and method of forming the same

摘要

A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p- and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end portions of the p- and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar.

主权项

1. A semiconductor light-emitting device comprising:
a semiconductor layer comprising a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer; a p-electrode arranged on the second principal surface; a plurality of n-electrodes extending in a longitudinal direction of the p-electrode, each arranged on the second principal surface and surrounded by the p-electrode; and an insulating layer arranged on side surfaces of the semiconductor layer and on the second principal surface of the semiconductor layer to surround the p-electrode and each of the n-electrodes, wherein each of the n-electrode includes a first portion electrically connected to an n-metal pillar and a second portion disposed continuously with the first portion, such that a current flows between the n-metal pillar and the second portion through the first portion, and a distance from a longitudinal edge of the p-electrode and a central longitudinal axis of an outermost n-electrode is equal to one-half of a distance between central longitudinal axes of adjacent n-electrodes.