Active pixel sensor with nanowire structured photodetectors

摘要

“An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.”

主权项

1. A device comprising:
a substrate; a nanowire photodetector located on the substrate, the nanowire photodetector comprising a nanowire having a surface and a core, wherein the axial direction of the nanowire is at an angle to the substrate; and an active pixel readout circuit in the substrate; wherein the axial direction of the nanowire is substantially perpendicular to the substrate.