发明名称 |
Integration of piezoelectric materials with substrates |
摘要 |
Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer. |
申请公布号 |
US8766512(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201012750768 |
申请日期 |
2010.03.31 |
申请人 |
Sand 9, Inc. |
发明人 |
Chen David M.;Kuypers Jan H.;Gaidarzhy Alexei;Zolfagharkhani Guiti |
分类号 |
H01L41/053 |
主分类号 |
H01L41/053 |
代理机构 |
Wolf, Greenfield & Sacks, P.C. |
代理人 |
Wolf, Greenfield & Sacks, P.C. |
主权项 |
1. A device comprising:
a first wafer comprising a substrate comprising a first material; a second wafer comprising a mechanical resonator comprising a piezoelectric material, different from the first material; a cap bonded to the substrate to form a hermetically sealed environment for the mechanical resonator; and integrated circuitry formed on the substrate and coupled to the mechanical resonator to control the mechanical resonator, wherein the first wafer is integrated with the second wafer such that the mechanical resonator is integrated with the substrate, and wherein the integrated circuitry is coupled to the mechanical resonator by at least one thru-silicon via (TSV). |
地址 |
Cambridge MA US |