发明名称 Wireless energy transfer over distances to a moving device
摘要 Described herein are embodiments of a source resonator coupled to an energy source generating an oscillating near field region; and at least one device resonator optionally coupled to at least one energy drain and freely moving within the near field region of the source resonator. The source resonator and the at least one device resonator may be coupled to transfer electromagnetic energy wirelessly from said source resonator to said at least one device resonator as the at least one device resonator moves freely within the near field region, where the source resonator and the at least one device resonator may be coupled to provide κ/sqrt(Γ1Γ2)>0.2 over an operating region.
申请公布号 US8766485(B2) 申请公布日期 2014.07.01
申请号 US200912649904 申请日期 2009.12.30
申请人 Massachusetts Institute of Technology 发明人 Joannopoulos John D.;Karalis Aristeidis;Soljacic Marin
分类号 H02J17/00;H02J5/00;H01Q9/04;B60L11/18 主分类号 H02J17/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A system, comprising: a source resonator configured to be coupled to an energy source to generate a near field region comprising a temporally oscillating magnetic field; and at least one device resonator configured to be freely moving within the near field region of the source resonator, wherein the source resonator and the at least one device resonator are configured to be coupled to transfer electromagnetic energy wirelessly from said source resonator to said at least one device resonator at a rate κ as the at least one device resonator moves freely within the near field region when the source resonator is coupled to the energy source, wherein the source resonator has a resonant frequency ω1, an intrinsic loss rate Γ1, and is capable of storing electromagnetic energy with a high intrinsic quality factor Q1=ω1/(2Γ1), and wherein the device resonator has a resonant frequency ω2, an intrinsic loss rate Γ2, and is capable of storing electromagnetic energy with a high intrinsic quality factor Q2=ω2/(2Γ2), and wherein κ/sqrt(Γ1Γ2)>0.2 as the at least one device resonator moves freely within the near field region over distances from source resonator larger than the characteristic size L2 of the device resonator, and wherein Q1>100 and Q2>100.
地址 Cambridge MA US