| 发明名称 | Method and apparatus for sensing on-chip characteristics | ||
| 摘要 | A sensor circuit performs a method for sensing on-chip characteristics. The method includes generating a first voltage using a drive current through a first set of transistors that are operating in saturation mode and generating a second voltage using subthreshold leakage current from a second set of transistors that are in subthreshold mode. The method further includes comparing the second voltage to the first voltage to sense an on-chip characteristic. The sensed on-chip characteristic can be temperature and/or gate length variation. | ||
| 申请公布号 | US8766703(B1) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201313835690 | 申请日期 | 2013.03.15 |
| 申请人 | Freescale Semiconductor, Inc. | 发明人 | Yang Jianan;Burnett James D.;Jetton Mark W.;Liston Thomas W. |
| 分类号 | H01L35/00;G05F1/567 | 主分类号 | H01L35/00 |
| 代理机构 | The Mason Group Patent Specialists LLC | 代理人 | The Mason Group Patent Specialists LLC ;Davis Valerie M. |
| 主权项 | 1. A method performed by a sensor circuit on an integrated circuit chip for sensing on-chip characteristics, the method comprising: generating a first voltage using a drive current through a first set of transistors that are operating in saturation mode; generating a second voltage using subthreshold leakage current from a second set of transistors that are in subthreshold mode; comparing the second voltage to the first voltage to sense an on-chip characteristic. | ||
| 地址 | Austin TX US | ||