发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
申请公布号 US8765529(B2) 申请公布日期 2014.07.01
申请号 US201314067717 申请日期 2013.10.30
申请人 Spansion LLC 发明人 Masuda Naomi
分类号 H01L21/56;H01L21/60;H01L23/498;H01L23/522 主分类号 H01L21/56
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device comprising: electrically coupling a semiconductor chip and a first land electrode; forming, on an upper surface of the first land electrode, a cylindrical through electrode that is electrically coupled with the first land electrode using at least one stud bump so as to form a connection electrode including the first land electrode and the cylindrical through electrode, wherein the at least one stud bump is formed between the cylindrical through electrode and the land electrode, wherein the diameter of the at least one stud bump is greater than the diameter of the cylindrical through electrode at the point at which the at least one stud bump and the cylindrical through electrode make contact; forming a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
地址 Sunnyvale CA US