| 发明名称 |
Method of manufacturing semiconductor device including plural semiconductor chips stacked together |
| 摘要 |
Such a method is disclosed that includes preparing first and second semiconductor chips, the first semiconductor chip including a first electrode formed on one surface thereof and a second electrode formed on the other surface thereof so as to overlap the first electrode as viewed from a stacking direction, and the second semiconductor chip including a third electrode formed on one surface thereof and a fourth electrode formed on the other surface thereof so as not to overlap the third electrode as viewed from the stacking direction, and stacking the first and second semiconductor chips in the stacking direction so that the second electrode is connected to the third electrode by using a bonding tool including a concave at a position corresponding to the fourth electrode. |
| 申请公布号 |
US8765526(B2) |
申请公布日期 |
2014.07.01 |
| 申请号 |
US201113333328 |
申请日期 |
2011.12.21 |
| 申请人 |
|
发明人 |
Ide Akira |
| 分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
| 代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
preparing first and second semiconductor chips, the first semiconductor chip including a first electrode formed on one surface thereof and a second electrode formed on the other surface thereof so as to overlap the first electrode as viewed from a stacking direction, and the second semiconductor chip including a third electrode formed on one surface thereof and a fourth electrode formed on the other surface thereof so as not to overlap the third electrode as viewed from the stacking direction; and stacking the first and second semiconductor chips in the stacking direction so that the second electrode is connected to the third electrode by using a bonding tool including a concave at a position corresponding to the fourth electrode. |
| 地址 |
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