Manufacturing method of light emitting device

摘要

A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first electrode, so as to form a passivation layer at least on a side surface of the first electrode. The passivation layer includes a compound of the second metal. A light emitting layer is formed on the first electrode. A second electrode is formed on the light emitting layer.

主权项

1. A manufacturing method of a light emitting device, comprising:
forming a first electrode on a substrate, the first electrode comprising a first patterned conductive layer, the first patterned conductive layer comprising an alloy containing a first metal and indium, an alloy containing the first metal and zinc, or an alloy containing the first metal and indium-zinc, wherein indium, zinc, or indium-zinc accounts for about 0.1 wt %˜about 2 wt % of the alloy; performing an annealing process on the first electrode to form a passivation layer at least on a side surface of the first electrode, wherein the passivation layer comprises a compound of indium oxide, zinc oxide, or indium-zinc oxide; forming a light emitting layer on the first electrode; and forming a second electrode on the light emitting layer.