Stacked semiconductor devices and fabrication methods thereof

摘要

A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein a number of the second connection structures is less than a number of the first connection structures.

主权项

1. A semiconductor device comprising:
first semiconductor chip comprising an internal circuit; a plurality of first connection structures disposed on a first side of the first semiconductor chip, each first connection structure comprising at least one connection element electrically connected to the internal circuit of the first semiconductor chip and at least one auxiliary element electrically insulated from the internal circuit of first semiconductor chip; a second semiconductor chip disposed on a second side of the first semiconductor chip; and a plurality of second connection structures disposed between the first and second semiconductor chips, each second connection structure comprising at least one connection element electrically connected to the internal circuits of the first and second semiconductor chips.