发明名称 |
Through hole via filling using electroless plating |
摘要 |
An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating. |
申请公布号 |
US8766422(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201113098083 |
申请日期 |
2011.04.29 |
申请人 |
STMicroelectronics Pte Ltd. |
发明人 |
Gan Kah Wee;Jin Yonggang;Liu Yun;Huang Yaohuang |
分类号 |
H01L23/02;H01L23/04 |
主分类号 |
H01L23/02 |
代理机构 |
Seed IP Law Group PLLC |
代理人 |
Seed IP Law Group PLLC |
主权项 |
1. A device comprising:
a reconstituted wafer formed of silica particles; a first integrated circuit embedded in the reconstituted wafer, the first integrated circuit having a contact pad; an aperture in the reconstituted wafer, the aperture extending from a first surface of the reconstituted wafer to a second surface of the reconstituted wafer, at least one of the silica particles protruding from a sidewall of the aperture; a first copper layer in the aperture and on the contact pad of the integrated circuit; a second copper layer in the aperture on the first copper layer; and a third copper layer in the aperture on the second copper layer, the third copper layer being electrically connected to the contact pad. |
地址 |
Singapore SG |