Deposited semiconductor structure to minimize N-type dopant diffusion and method of making

摘要

A memory cell is provided that includes a semiconductor pillar and a reversible resistance-switching element coupled to the semiconductor pillar. The semiconductor pillar includes a heavily doped bottom region of a first conductivity type, a heavily doped top region of a second conductivity type, and a lightly doped or intrinsic middle region interposed between and contacting the top and bottom regions. The middle region includes a first proportion of germanium greater than a proportion of germanium in the top region and/or the bottom region. The reversible resistivity-switching element includes a material selected from the group consisting of NiO, Nb2O5, TiO2, HfO2, Al2O3, CoO, MgOx, CrO2, VO, BN, and AlN. Numerous other aspects are provided.

主权项

1. A memory cell comprising:
a reversible resistivity-switching element comprising a material selected from the group consisting of NiO, Nb2O5, TiO2, HfO2, Al2O3, CoO, MgOx, CrO2, VO, BN, and AlN; and a semiconductor pillar coupled to the reversible resistivity-switching element, the semiconductor pillar comprising:
a heavily doped bottom region of a first conductivity type;a heavily doped top region of a second conductivity type; anda lightly doped or intrinsic middle region interposed between and contacting the top and bottom regions,wherein the middle region comprises a first proportion of germanium greater than a proportion of germanium in the top region and/or the bottom region.