Optoelectronic integrated circuit substrate and method of fabricating the same

摘要

An optoelectronic integrated circuit substrate may include a first region and a second region. The first region and the second region each include at least two buried insulation layers having different thicknesses. The at least two buried insulation layers of the first region are formed at a greater depth and have a greater thickness as compared to the at least two buried insulation layers of the second region. A micro-electromechanical systems (MEMS) structure may be formed in a third region that does not include a buried insulation layer.

主权项

1. An optoelectronic integrated circuit substrate comprising:
a first region and a second region, the first region including a buried insulation layer having a first thickness and the second region including a buried insulation layer having a second thickness different from the first thickness; optical devices on the first region; and electronic devices on the second region, wherein the buried insulation layer of the first region is thicker than the buried insulation layer of the second region, the buried insulation layer of the first region has a thickness from about 0.5 μm to about 3 μm at a depth from about 100 nm to about 500 nm from a top surface of the optoelectronic integrated circuit substrate, and the buried insulation layer of the second region has a thickness from about 5 nm to about 300 nm at a depth from about 1 nm to about 100 nm from the top surface of the optoelectronic integrated circuit substrate.