发明名称 Method and system for providing a magnetic junction using half metallic ferromagnets
摘要 A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.
申请公布号 US8766383(B2) 申请公布日期 2014.07.01
申请号 US201213517731 申请日期 2012.06.14
申请人 Samsung Electronics Co., Ltd. 发明人 Apalkov Dmytro;Tang Xueti;Krounbi Mohamad Towfik;Nikitin Vladimir;Khvalkovskiy Alexey Vasilyevitch
分类号 H01L29/82;G11C11/00;G11C11/14;G11C11/15 主分类号 H01L29/82
代理机构 Convergent Law Group LLP 代理人 Convergent Law Group LLP
主权项 1. A magnetic junction for use in a magnetic device comprising: a pinned layer having a pinned layer magnetization; a nonmagnetic spacer layer; and a free layer having an easy axis, the nonmagnetic spacer layer residing between the pinned layer and the free layer, at least one of the free layer and the pinned layer including at least one half-metal; wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; wherein the free layer has a magnetic anisotropy selected from an easy cone anisotropy and a magnetic bias induced anisotropy, the easy cone anisotropy being such that at least one of the plurality of stable magnetic states occurs for a free layer magnetic moment being at a nonzero angle around the easy axis, the magnetic bias induced anisotropy being generated by a magnetic bias from a magnetic bias structure in the magnetic junction, the magnetic bias being substantially perpendicular to the easy axis of the free layer and to a pinned layer easy axis for the pinned layer, and wherein the pinned layer easy axis is substantially perpendicular to the easy axis of the free layer if the free layer has the magnetic bias induced anisotropy.
地址 Gyeonggi-Do KR