Semiconductor storage device and manufacturing method of semiconductor storage device

摘要

According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided.

主权项

1. A semiconductor storage device comprising:
a columnar semiconductor; a tunnel dielectric film that is provided on a side surface of the columnar semiconductor; a floating gate electrode having a first side surface facing the columnar semiconductor via the tunnel dielectric film, an upper surface, a lower surface and a second side surface opposite the first side surface; a block dielectric film that is provided to surround the floating gate electrode; and a control gate electrode including a U-shaped cross-sectional portion having upper and lower portions connected by a connecting side portion and that is provided to surround at least an end of the floating gate electrode including the second side surface via the block dielectric film, wherein the upper surface, the lower surface and the second side surface of the floating gate electrode are surrounded by and face the upper portion, the lower portion and the connecting side portion of the control gate electrode.