| 发明名称 | Phase shift mask for extreme ultraviolet lithography and method of fabricating same | ||
| 摘要 | A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region. | ||
| 申请公布号 | US8765330(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201213564198 | 申请日期 | 2012.08.01 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Shih Chia-Tsung;Hsu Pei-Chung;Yu Shinn-Sheng;Wu Tsiao-Chen;Lu Yen-Cheng;Chang Shu-Hao;Chen Chia-Jen;Lee Hsin-Chang;Yen Anthony |
| 分类号 | G03F1/24;G03F1/54 | 主分类号 | G03F1/24 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A mask comprising: a substrate; a reflective multilayer coating disposed over the substrate; an Ag2O absorber layer disposed over the reflective multilayer coating; and a tantalum-containing absorber layer disposed over the Ag2O absorber layer adjacent to a mask image region. | ||
| 地址 | Hsin-Chu TW | ||