发明名称 |
Methods of patterning a material on polymeric substrates |
摘要 |
A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region. |
申请公布号 |
US8764996(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US200611550542 |
申请日期 |
2006.10.18 |
申请人 |
3M Innovative Properties Company |
发明人 |
Frey Matthew H.;Nguyen Khanh P. |
分类号 |
C23F1/02;H05K3/06;H05K3/00;H05B3/84;H05K9/00;H05K1/03 |
主分类号 |
C23F1/02 |
代理机构 |
|
代理人 |
Allen Gregory D.;Pishko Adrian L. |
主权项 |
1. A method of patterning a first material on a polymeric substrate comprising:
providing a transparent polymeric film substrate having a major surface with a relief pattern comprising a recessed region and an adjacent raised region, wherein the recessed region has a floor and sidewalls; depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, wherein the depositing a first material comprises depositing a metal onto the polymeric film substrate; forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, wherein the functionalizing material is a self-assembled monolayer selectively onto the raised region and the self-assembled monolayer comprises a chemical species selected from the group consisting of organosulfur compounds, silanes, phosphonic acids, benzotriazoles, and carboxylic acids, wherein forming comprises unwinding the coated polymeric film substrate from a support and winding the coated polymeric film substrate onto a support; and etching the first material from the polymeric substrate selectively from the floor and sidewalls of the unfunctionalized recessed region, forming a first material patterned polymeric substrate. |
地址 |
St. Paul MN US |