| 摘要 |
<p>The present technique is to provide a nonvolatile memory device which prevents over erase and increases the degree of integration at the same time and a method of fabricating the same. The present technique provides a nonvolatile memory device which comprises a select gate which is formed on a substrate; floating gates which are formed in the sidewall of the select gate and are separated from each other to be independently programmable; and bonding regions which are formed on the substrate and are adjacent to each of the floating gates.</p> |
