| 摘要 |
PROBLEM TO BE SOLVED: To downsize a semiconductor device.SOLUTION: A semiconductor device comprises: a p-type semiconductor layer; an n-type semiconductor layer connected to the p-type semiconductor layer; a first electrode layer formed in the n-type semiconductor layer; a second electrode layer formed in the p-type semiconductor layer; and a control electrode layer formed at a position opposite to a position in the p-type semiconductor layer, where the second electrode layer is formed across the n-type semiconductor layer. The first electrode layer and the second electrode layer are electrically connected with each other so as to operate at the same potential. The first electrode layer is connected to a surface of the second electrode layer opposite to a surface in contact with the p-type semiconductor layer. The second electrode layer is connected to a connection line which is a line on th side of an interface between the second electrode layer and the p-type semiconductor layer within an outer periphery line at a junction interface between the p-type semiconductor layer and the n-type semiconductor layer. The second electrode layer is formed to extend on a surface of the n-type semiconductor layer to a position on the control electrode layer side across the connection line. |
