| 摘要 |
PROBLEM TO BE SOLVED: To provide a negative resist material, particularly a chemically amplified negative resist material, which has higher resolution than a conventional hydroxystyrene or novolac based negative resist material, which gives a good pattern profile after exposure and shows excellent etching durability, and to provide a pattern forming method using the material.SOLUTION: The negative resist material comprises at least a polymeric compound as a base resin, which is expressed by general formula (1) described below and comprises a repeating unit (a) having a cyclopentadienyl complex. |
