Method of forming dielectric films, new precursors and their use in semi-conductor manufacturing

摘要

Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I):
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (M 1 1-a M 2 a )O b N c ,€ƒ€ƒ€ƒ€ƒ€ƒ(I)
wherein 0 ‰¤ a < 1, 0 < b ‰¤ 3, 0 ‰¤ c ‰¤ 1, M 1 represents a metal selected from (Hf), (Zr) and (Ti); and M 2 represents a metal atom atoms, which comprises the following steps:
- A step a) of providing a substrate into a reaction chamber;
- A step (b) of vaporizing a M 1 metal containing precursor selected from: Zr(MeCp)(NMe 2 ) 3 , Zr(EtCp)(NMe 2 ) 3 , ZrCp(NMe 2 ) 3 , Zr(MeCp)(NEtMe) 3 , Zr(EtCp)(NEtMe) 3 , ZrCp(NEtMe) 3 , Zr(MeCp)(NEt 2 ) 3 , Zr(EtCp)(NEt 2 ) 3 , ZrCp(NEt 2 ) 3 , Zr(iPr 2 Cp)(NMe 2 ) 3 , Zr(tBu 2 Cp)(NMe 2 ) 3 , Hf(MeCp)(NMe 2 ) 3 , Hf(EtCp)(NMe 2 ) 3 , HfCp(NMe 2 ) 3 , Hf(MeCp)(NEtMe) 3 , Hf(EtCp)(NEtMe) 3 , HfCp(NEtMe) 3 , Hf(MeCp)(NEt 2 ) 3 , Hf(EtCp)(NEt 2 ) 3 , HfCp(NEt 2 ) 3 , Hf(iPr 2 Cp)(NMe 2 ) 3 , Hf(tBu 2 Cp)(NMe 2 ) 3 , to form a first gas phase metal source;
- A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate.