| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit and a semiconductor device that are capable of high speed operation.SOLUTION: The semiconductor circuit includes: an NMOS transistor N2 connected in parallel with an NMOS transistor N1; a capacitive element C1 connected to an input terminal 20 and to a gate terminal of the NMOS transistor N2; and a PMOS transistor P2 having a source terminal connected to a supply voltage VDD, a drain terminal connected to the gate terminal of the NMOS transistor N2, and a gate terminal connected to a node 1. The PMOS transistor P2 clamps a voltage input into the gate terminal of the NMOS transistor N2 at a voltage higher by a forward voltage Vf of a parasitic diode. The capacitive element C1 stores a charge. When the level of an input signal input into the input terminal 20 sharply transitions from a low level to a high level, the NMOS transistor N2 transfers to the node 1 a voltage higher than the supply voltage VDD minus a threshold voltage Vtn by the forward voltage Vf of the parasitic diode. |
