COATING LIQUID FOR METAL OXIDE FILM FORMATION, METAL OXIDE FILM, FIELD EFFECT TRANSISTOR, AND PROCESS OF MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a coating liquid for metal oxide film formation, capable of easily manufacturing a metal oxide film having a desired volume resistivity in a large area, having high accuracy in forming the metal oxide film of a desired shape.SOLUTION: The coating liquid for metal oxide film formation contains an inorganic indium compound, a barium compound, and an organic solvent.