发明名称 COMPOSITION FOR FORMING OVERLAY FILM AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming an overlay film, from which a pattern excellent in roughness and a pattern profile can be formed in a pattern forming process by extreme ultraviolet exposure, and to provide a method for forming a pattern using the above composition.SOLUTION: The composition for forming an overlay film comprises a fullerene derivative having a hydrophilic group, and a solvent. The method for forming a pattern comprises applying the above composition on a resist surface, and exposing and developing the composition. The composition may further include a polymer.
申请公布号 JP2014119497(A) 申请公布日期 2014.06.30
申请号 JP20120272516 申请日期 2012.12.13
申请人 AZ ELECTRONIC MATERIALS MFG CO LTD 发明人 WANG XIAOWEI;SUZUKI MASATO;OKAYASU TETSUO;GEORG PAWLOWSKI
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
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