PRODUCTION METHOD OF NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE, AND NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of producing efficiently a high-quality nitride semiconductor crystal of a group 13 metal in the periodic table having reduced stacking faults generated in the crystal, and having a non-polar surface or a half-polar surface as a main surface.SOLUTION: A nitride semiconductor ground substrate of a group 13 metal in the periodic table obtained by growing a crystal under the presence of a solvent in the supercritical state and/or the subcritical state is used, and a nitride semiconductor crystal of a group 13 metal in the periodic table is produced on the ground substrate by growing the crystal, to thereby enable efficient production of the nitride semiconductor crystal of the group 13 metal in the periodic table having extremely few stacking faults, and having a non-polar surface or a half-polar surface as a main surface.