| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high performance, highly reliable nonvolatile memory cell.SOLUTION: A nonvolatile memory cell NVM1 is constituted of a first n-well NW1, a second n-well NW2 formed while spaced apart therefrom in a first direction X, a select transistor QS formed in the first n-well NW1, a floating gate electrode FG formed to overlap a part of the first n-well NW1, and a part of the second n-well NW2 in the plan view, and a semiconductor region of n-type conductivity formed in the second n-well NW2 on both sides of the floating gate electrode FG. During write operation, a voltage of -7 V is applied to the drain of a select nonvolatile memory cell, a voltage of -8 V is applied to the gate electrode EG of the select transistor QS, and -3 V is further applied to a semiconductor region of p-type conductivity, thus accelerating the write speed. Consequently, a select nonvolatile memory cell and a non-select nonvolatile memory cell are sorted. |
