| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for high breakdown voltage and high temperature, e.g., a high breakdown voltage module, by preventing partial discharge even when a bubble exists in an insulating sealing member (silicon gel), and to provide a manufacturing method therefor.SOLUTION: In a semiconductor device 100 having conductive thin films 4, 6 fixing onto a ceramic substrate 5, metal electrodes 3, 7 fixing onto the conductive thin films 4, 6, and a silicon gel 13 in contact with the conductive thin films 4, 6 and metal electrodes 3, 7, the conductive thin films 4, 6 protrude from the end of interface where the metal electrodes 3, 7 and conductive thin films 4, 6 are fixed, and a continuous recess 16 is provided in the outer periphery of the metal electrodes 3, 7, fixing to the conductive thin films 4, 6, on the fixing side thereof. |
