METHOD FOR SEPARATING SUBSTRATE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present invention provides a method for separating a substrate and a manufacturing method of a semiconductor device using the same. The method for separating a substrate comprises the steps of: preparing a substrate; forming a sacrificial layer on the substrate; forming a protrusion pattern including a convex part and a concave part on the sacrificial layer by partially patterning the sacrificial layer; forming a mask pattern having a masking area on the concave part; forming a microcavity in the sacrificial layer by partially etching the sacrificial layer; forming a semiconductor laminate structure covering the mask pattern on the sacrificial layer; and separating the substrate from the semiconductor laminate structure. Accordingly, a size of the microcavity, used as a transferring channel of an etching solution, can be increased; and thus separation of the substrate can be efficiently performed.