发明名称 CRYSTAL SILICON SOLAR CELL PREVENTING GENERATION OF DARK AREA DUE TO BREAKING OF ELECTRODE GATE LINES
摘要 <p>PROBLEM TO BE SOLVED: To provide a crystal silicon solar cell that can ameliorate loss of electric performance due to gate break, allows finer gate lines to be designed, has a simple structure and is easily materialized.SOLUTION: An embodiment comprises a silicon chip body 1. On a surface of the silicon chip body 1, a plurality of main gate lines 2 are formed in the longitudinal direction; a plurality of fine gate lines 3 are formed in the transverse direction to electrically connect to the main gate lines 2; and a plurality of second gate lines 4 are provided to electrically connect the fine gate lines 3.</p>
申请公布号 JP2014120761(A) 申请公布日期 2014.06.30
申请号 JP20130229566 申请日期 2013.11.05
申请人 TALESUN PHOTOVOLTAIC TECHNOLOGY CO LTD 发明人 LIAN WEIFEI;BAO LUO;WEI QINGZHU;MIAO CHENGXIANG;ZHANG HUIMING;REN JUNLIN
分类号 H01L31/04 主分类号 H01L31/04
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