发明名称 |
CRYSTAL SILICON SOLAR CELL PREVENTING GENERATION OF DARK AREA DUE TO BREAKING OF ELECTRODE GATE LINES |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crystal silicon solar cell that can ameliorate loss of electric performance due to gate break, allows finer gate lines to be designed, has a simple structure and is easily materialized.SOLUTION: An embodiment comprises a silicon chip body 1. On a surface of the silicon chip body 1, a plurality of main gate lines 2 are formed in the longitudinal direction; a plurality of fine gate lines 3 are formed in the transverse direction to electrically connect to the main gate lines 2; and a plurality of second gate lines 4 are provided to electrically connect the fine gate lines 3.</p> |
申请公布号 |
JP2014120761(A) |
申请公布日期 |
2014.06.30 |
申请号 |
JP20130229566 |
申请日期 |
2013.11.05 |
申请人 |
TALESUN PHOTOVOLTAIC TECHNOLOGY CO LTD |
发明人 |
LIAN WEIFEI;BAO LUO;WEI QINGZHU;MIAO CHENGXIANG;ZHANG HUIMING;REN JUNLIN |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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