发明名称 |
HETEROJUNCTION BIPOLAR TRANSISTOR, POWER AMPLIFIER USING THE SAME, AND METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To combine prevention of thermorunaway and prevention of degradation in power amplifier characteristics at high temperature.SOLUTION: A heterojunction bipolar transistor 100 comprises a ballast resistance layer 7. The ballast resistance layer 7 comprises: an AlGaAs emitter ballast resistance layer 7a having a positive resistivity temperature coefficient in a first temperature range (room temperature-100°C) and a second temperature range (100°C or more); and an AlGaAs emitter ballast resistance layer 7b having a positive resistivity temperature coefficient in the second temperature range.</p> |
申请公布号 |
JP2014120668(A) |
申请公布日期 |
2014.06.30 |
申请号 |
JP20120275894 |
申请日期 |
2012.12.18 |
申请人 |
MURATA MFG CO LTD |
发明人 |
OBE ISAO;UMEMOTO YASUNARI;KUROKAWA ATSUSHI |
分类号 |
H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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