发明名称 DRIVE CIRCUIT FOR TRANSISTOR, SEMICONDUCTOR BREAKER USING THE SAME, AND METHOD OF CONTROLLING INTERRUPTION OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a drive circuit for a transistor, a semiconductor breaker and a method of controlling interruption thereof which limit an overcurrent in a short time and satisfactorily suppress an overvoltage caused when turning off the transistor.SOLUTION: The transistor drive circuit includes: a current detection section 67 for detecting a source side current of a transistor 66; a voltage detection section 69 for detecting a drain side voltage of the transistor 66; and a control section 70 for deciding a drive state of the transistor 66 according to an output of the voltage detection section 69. The control section 70 performs gate voltage control of turning off the transistor 66 when the current detected by the current detection section 67 exceeds a predetermined overcurrent threshold, and performs voltage control of bringing a gate voltage of the transistor 66 to a first intermediate potential between an on voltage and an off voltage when the voltage detected by the voltage detection section 67 exceeds a predetermined electromotive voltage upper limit threshold.</p>
申请公布号 JP2014121199(A) 申请公布日期 2014.06.30
申请号 JP20120275676 申请日期 2012.12.18
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 SAOTOME ISAO
分类号 H02M1/00;H02H3/08;H02H3/24;H02H7/20 主分类号 H02M1/00
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